Passivation pushes gallium oxide transistor to over 8kV

This post was originally published on this site

Organic surface passivation has allowed a gallium oxide transistor to hold-off 8.03kV – the highest reported for a lateral mosfet, according to the University of Buffalo engineering team behind the device. The proof-of-concept device was passivated with the high field strength epoxy polymer SU-8. Without passivation, a similar transistor scored 2.7kV. This un-passivated voltage is …

This story continues at Passivation pushes gallium oxide transistor to over 8kV

Or just read more coverage at Electronics Weekly