Power block MOSFET increases efficiency in a smaller package

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Diodes’ half-bridge power block, integrating dual MOSFETs in a single 3.3 x 3.3-mm package, offers increased efficiency while reducing board space requirement by up to 50% compared to a two-chip solution

By Gina Roos, editor-in-chief

Diodes Inc. has released the first device in a new generation of discrete MOSFETs. The 30-V DMN3012LEG integrates dual MOSFETs in a single 3.3 × 3.3-mm (PowerDI 3333-8, Type D) package and reduces board space requirements by up to 50% compared to a typical two-chip solution.

Offering increased efficiency in a smaller package, the half-bridge power block MOSFET provides cost, power, and space savings in a variety of power conversion and control applications, including point of load (PoL) and power management modules. The  DMN3012LEG can be used in DC/DC synchronous buck converters and half-bridge power topologies to reduce the size of power converter solutions, which typically require two separate devices.

Diodes-power-block-MOSFET

The 3D structure of the PowerDI 3333-8 Type D package helps to increase overall power efficiency, while the high voltage and current ratings make it applicable in a wide range of applications, said the company. Other benefits include a fully-grounded pad design that delivers good thermal performance, enabling the solution to run cooler, while the high switching speeds and efficiency reduce the need for large inductors and capacitors.

The integration of two N-channel enhancement mode MOSFETs  makes it well suited for synchronous buck converter designs. Using a lateral diffused MOS (LDMOS) process, it combines fast turn-on and turn-off delay speeds of 5.1 ns and 6.4 ns for Q1, and 4.4 ns and 12.4 ns for Q2. Other specs include a maximum on-resistance (RDS(ON)) of 12 mΩ at Vgs=5V for Q1 and 6 mΩ at Vgs=5V for Q2. The device can accept a 30-V drain-source voltage with 10-V gate-source, while supporting a 5-V gate drive.

The DMN3012LEG is priced at $0.589 each in quantities of 1,000