Renesas Electronics Corp. has beefed up its RF amplifiers portfolio with the launch of the F1490 with ultra-low quiescent current of 75 mA. The new RF amplifier delivers power savings, lower power consumption, and greater design flexibility for 4G/5G infrastructure systems.
The F1490 is a second-generation high-gain, 2-stage RF amplifier that covers the key sub-6 GHz 5G frequency bands from 1.8 GHz to 5.0 GHz. It features high gain, high linearity, and wide bandwidth, and is well suited for use with both FDD and TDD sub-6 GHz 5G applications.
- Two selectable gain modes: 39.5 dB high gain or 35.5 dB low gain
- High performance OIP3 of 38 dBm and OP1dB of 24 dBm
- RF frequency range of 1.8 GHz to 5.0 GHz
- Ultra-low quiescent current of 75 mA
- Supply voltage of 5V
- Up to 115°C TCBoperating temperature
The F1490 offers simplified product selection for transmitters (Tx), elimination of a gain block with better margin, two selectable gain modes for system design flexibility, and lower power consumption. It is also pin-to-pin compatibility with current devices, which lowers the cost of design updates.
“The F1490 delivers high gain with selectable modes and ultra-low power consumption, while maintaining high OP1dB performance and 2.4 dB noise figure, to meet all the system-level requirements customers want from their massive MIMO 5G pre-driver,” said Naveen Yanduru, vice president of RF Communications, Industrial and Communications Business Division at Renesas, in a statement.
Samples of the F1490 are available now in a 3 x 3 mm, 16-pin QFN package with mass production available in September 2020.
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