10kW from discrete GaN device

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Transphorm is sampling its first 5th gen SuperGaNTM device meant for EVs, It claims to offer the world’s lowest packaged on-resistance with 25% lower power loss compared to SiC. ‘Transphorm’s demonstration of achieving 10 kilowatts of power from a discrete packaged GaN device in a bridge configuration is further validation of the exciting promise of …

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