Infineon Technologies AG has expanded its EiceDRIVER 1ED Compact isolated gate driver series with the introduction of the X3 Compact (1ED31xx) family. Designed for applications that need a small footprint, this gate driver provides separate output options with active shutdown and short circuit clamping in a DSO-8 300-mil package. Target applications include industrial drives, solar systems , EV charging, uninterruptible power supplies, and commercial air conditioning.
The EiceDRIVER X3 Compact offers a benchmark CMTI of 200 kV/μs, and typical 5-A, 10-A, and 14-A output current. The X3 Compact is recognized under UL 1577 with an insulation test voltage of 5.7 kV RMS. The 14-A high output current is well suited for high switching frequency applications as well as for IGBT 7, which requires a much higher gate driver output current compared to IGBT 4, said Infineon.
With the same CMTI robustness as the X3 Enhanced of more than 200 kV/µs, the X3 Compact also eliminates faulty switching patterns. Earlier in December, Infineon introduced the EiceDriver X3 Enhanced analog and digital gate drivers for a range of industrial applications. These drivers lower external component count and are designed for IGBTs as well as silicon (Si) and silicon carbide (SiC) MOSFETs in discrete and module packages.
In addition, the X3 Compact’s tight propagation delay matching of 7 ns (max.) leads to shorter deadtime, said Infineon. Another key spec is the 40-V absolute maximum output supply voltage.
Like other EiceDRIVER X3 devices, all X3 Compact variants integrate input filters, which reduce the need for external filters, delivering a lower bill of materials cost along with accurate timing.
The EiceDRIVER X3 Compact is suited for superjunction MOSFETs such as CoolMOS, SiC MOSFETs such as CoolSiC, and IGBT modules. The active Miller clamp option is best suited for SiC MOSFET 0-V turn off, said Infineon. These devices can be used in rugged environments.
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