Non-destructive carrier measurement in SiC power devices

This post was originally published on this site

Researchers at Nagoya Institute of Technology have found a way to create a 3D map of carriers inside silicon carbide power transistors without sawing them up, proposing the system as a way of improving SiC bipolar devices. The technique, which works down to 250μm and has ~10μm resolution, is ‘time-resolved free carrier absorption with inter-sectional lights …

This story continues at Non-destructive carrier measurement in SiC power devices

Or just read more coverage at Electronics Weekly