Radiation-Tolerant NOR Flash Memory For Space-Grade FPGAs

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Excellent single-chip solutions for applications such as FPGA configuration, image storage, microcontroller data and boot code storage

To address the growing need for highly reliable space-grade field-programmable gate arrays (FPGAs) with high-density non-volatile memories, Infineon Technologies LLC, an Infineon Technologies AG company, has launched the 256 Mb and 512 Mb high-density radiation-tolerant (RadTol) NOR Flash memory products. They are qualified to MIL-PRF-38535’s QML-V flow (QML-V Equivalent), which is the highest quality and reliability standard certification for aerospace-grade ICs. The non-volatile memories are superior, low-pin count, single-chip solutions for applications such as FPGA configuration, image storage, microcontroller data and boot code storage.

256 Mb radiation-tolerant (RadTol) NOR Flash
512 Mb radiation-tolerant (RadTol) NOR Flash

When used at higher clock rates, the data transfer supported by the devices match/exceed traditional parallel asynchronous NOR Flash memories while dramatically reducing pin count. They are radiation-tolerant up to 30 krad (Si) biased and 125 krad (Si) unbiased. At 125°C, the devices support 1,000 Program/Erase cycles and 30 years of data retention and at 85°C 10k Program/Erase cycles with 250 years of data retention.

For developing the RadTol 256 Mb quad-SPI (QSPI) and 512 Mb dual quad-SPI NOR Flash memory products, a 65 nm floating gate Flash process technology was used. Both devices feature 133 MHz SDR interface speed. The 512 Mb device comprises two independent 256 Mb die that fit side by side in a single package solution. This provides flexibility for designers to operate the device in dual QSPI or single QSPI mode on either die independently, offering an option to use the second die as a backup solution.

The NOR Flash devices can be programmed in-system through the FPGA or through a standalone programmer. The devices are available in a 24×12 mm2 36-lead ceramic flatpack package and support temperature grades from -55°C to 125°C, with SEU rate < 1 x 10-16 upsets/bit-day, SEL > 60 MeV.cm2/mg (85°C), SEFI > 60 MeV.cm2/mg (LET) and SEU threshold > 28 Mev.cm2/mg (LET).